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NVTFS010N10MCLTAG - onsemi

Description: Low RDS (ON); Low QGand Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant; Small Footprint (3x3 mm)

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NVTFS010N10MCLTAG - onsemi - PCB symbol
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PCB Footprints
NVTFS010N10MCLTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511DY ISSUE A
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3D Models
NVTFS010N10MCLTAG - onsemi - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511DY ISSUE A
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NVTFS010N10MCLTAG Details

  • Manufacturer Part Number:

    NVTFS010N10MCLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511DY

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Date Of Intro:

    2019-07-18

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    526 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    11.7 A

  • Drain-source On Resistance-Max:

    0.0106 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    77.8 W

  • Pulsed Drain Current-Max (IDM):

    232 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS010N10MCLTAG Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
  • Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal gradients. Additionally, consider using thermal management techniques such as heat sinks or thermal interfaces to maintain a stable temperature.
  • Exceeding the maximum Tj rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. It is essential to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • Implement ESD protection measures such as using ESD-sensitive handling procedures, using ESD-protective packaging, and incorporating ESD-protection circuits or devices in the system design.
  • Follow the recommended soldering conditions outlined in the datasheet, including peak temperature, soldering time, and temperature ramp rates. This ensures reliable solder joints and minimizes the risk of device damage.

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NVTFS010N10MCLTAG Overview

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