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NVTFWS1D3N04XMTAG - onsemi

Description: Single N-Channel Power MOSFET 40 V, 195A, 1.3 mΩ

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PCB Footprints
NVTFWS1D3N04XMTAG - onsemi PCB footprint - Other - Other - WDFNW8 3.3x3.3, 0.65P (Full−Cut 8FL Fused WF) CASE 515AP ISSUE O
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3D Models
NVTFWS1D3N04XMTAG - onsemi  - 3D model - Other - WDFNW8 3.3x3.3, 0.65P (Full−Cut 8FL Fused WF) CASE 515AP ISSUE O
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NVTFWS1D3N04XMTAG Details

  • Manufacturer Part Number:

    NVTFWS1D3N04XMTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW8 3.30x3.30x0.75, 0.65P

  • Manufacturer Package Code:

    515AP

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    281 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    178 A

  • Drain-source On Resistance-Max:

    0.00143 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    83 W

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    895 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NVTFWS1D3N04XMTAG Overview

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