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NVTFWS4D9N04XMTAG - onsemi

Description: AEC−Q101 Qualified and PPAP Capable; RoHS Compliant; Small Footprint (3 x3 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option

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PCB Footprints
NVTFWS4D9N04XMTAG - onsemi PCB footprint - Other - Other - WDFNW8 3.3x3.3, 0.65P (Full−Cut 8FL WF)
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3D Models
NVTFWS4D9N04XMTAG - onsemi  - 3D model - Other - WDFNW8 3.3x3.3, 0.65P (Full−Cut 8FL WF)
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NVTFWS4D9N04XMTAG Details

  • Manufacturer Part Number:

    NVTFWS4D9N04XMTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW8 3.3x3.3, 0.65P (Full−Cut ?8FL WF)

  • Package Description:

    WDFNW-8

  • Manufacturer Package Code:

    515AN

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    68 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    66 A

  • Drain-source On Resistance-Max:

    0.0049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    265 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NVTFWS4D9N04XMTAG Overview

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