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NVXK2PR80WXT2 - onsemi

Description: Module Serialization for Full Traceability; Lead Free, ROHS and UL94V−0 Compliant; DIP Silicon Carbide 3−Phase Bridge Power Module for On−board Charger (OBC) for xEV; Compact Design for Low Total Module Resistance; Creepage and Clearance per IEC 60664−1, IEC 60950−1; Automotive Qualified per AEC−Q101 and AQG324

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NVXK2PR80WXT2 - onsemi PCB footprint - Other - Other - NVXK2PR80WXT2-4
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NVXK2PR80WXT2 - onsemi  - 3D model - Other - NVXK2PR80WXT2-4
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NVXK2PR80WXT2 Details

  • Manufacturer Part Number:

    NVXK2PR80WXT2

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    APM32 44.00x28.80x5.70

  • Manufacturer Package Code:

    MODHM

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Configuration:

    2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.116 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7.9 pF

  • JESD-30 Code:

    R-PDIP-T32

  • JESD-609 Code:

    e3

  • Number of Elements:

    4

  • Number of Terminals:

    32

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    153 A

  • Reference Standard:

    AEC-Q101; IEC-60664-1; IEC-60950-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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NVXK2PR80WXT2 Overview

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