2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
27 A
Drain-source On Resistance-Max:
0.059 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
12.5 pF
JESD-30 Code:
R-PDIP-T32
Number of Elements:
4
Number of Terminals:
32
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
IN-LINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
319 W
Pulsed Drain Current-Max (IDM):
240 A
Reference Standard:
AEC-Q101; IEC-60664-1; IEC-60950-1
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
Trust Checks
No trust score is available for this model.
Trust Score Unavailable
Sponsored
NVXK2TR40WXT Overview
Use the download button to access the NVXK2TR40WXT 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NVXK2,
or try a keyword search, such as Power Field-Effect Transistors
