BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
51 A
Drain-source On Resistance-Max:
0.03 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
19 pF
JESD-30 Code:
R-XUFM-X22
Number of Elements:
4
Number of Terminals:
22
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
119 W
Pulsed Drain Current-Max (IDM):
153 A
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
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NXH020F120MNF1PG Overview
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