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NXV08H300DT1 - onsemi

Description: 2 Phase MOSFET Module At Customer Side this Module Can Be Used as 1/2 Bridge MOSFET Module by Combining 2 Phase Out Power Terminals; Electrically Isolated DBC Substrate for Low Rthjc; Compact Design for Low Total Module Resistance; Module Serialization for Full Traceability; Module Level AQG324 Qualified. Components Inside are AEC Q101 (MOSFET) & AEC Q200 (Passives) Qualified; UL 94V−0 Compliant; This Device is Pb−Free and is RoHS Compliant

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NXV08H300DT1 Details

  • Manufacturer Part Number:

    NXV08H300DT1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    APM17−MDC

  • Manufacturer Package Code:

    MODHH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    2445 mJ

  • Configuration:

    COMPLEX

  • DS Breakdown Voltage-Min:

    80 V

  • Drain-source On Resistance-Max:

    0.000763 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    77 pF

  • JESD-30 Code:

    R-PDIP-T17

  • JESD-609 Code:

    e3

  • Number of Elements:

    4

  • Number of Terminals:

    17

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

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