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P2N2222A - onsemi

Description: TRANS NPN 40V 0.6A TO92

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P2N2222A Details

  • Manufacturer Part Number:

    P2N2222A

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    CASE 29-11, TO-226AA, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    75

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.625 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    300 MHz

  • Turn-off Time-Max (toff):

    285 ns

  • Turn-on Time-Max (ton):

    35 ns

P2N2222A Frequently Asked Questions (FAQs)

  • The maximum collector current that can be handled by the P2N2222A is 500 mA, as specified in the datasheet. However, it's recommended to derate the current to ensure reliable operation and to prevent overheating.
  • To ensure proper biasing for switching applications, make sure to provide a base current that is sufficient to saturate the transistor. A general rule of thumb is to provide a base current that is 1/10th to 1/20th of the collector current. Additionally, ensure that the base-emitter voltage is within the recommended range of 0.6-0.8V.
  • The maximum power dissipation of the P2N2222A is 625 mW, as specified in the datasheet. However, this value can be derated based on the ambient temperature and the thermal resistance of the package.
  • While the P2N2222A can be used as a switch, it's not ideal for high-frequency applications due to its relatively high transition frequency (ft) of 250 MHz. For high-frequency applications, consider using a transistor with a higher ft, such as the 2N3904 or the MMBT2222A.
  • To protect the P2N2222A from ESD, ensure that all handling and assembly procedures follow proper ESD precautions, such as using anti-static wrist straps, mats, and packaging materials. Additionally, consider adding ESD protection devices, such as TVS diodes or ESD protection arrays, to the circuit design.

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Part Image P2N2222A{TAPE-REEL} Continental Device India Ltd

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Part Image KSP2222ATF Fairchild Semiconductor Corporation

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Part Image KSP2222A Samsung Semiconductor

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image KSP2222J05Z Fairchild Semiconductor Corporation

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Part Image P2N2222AG onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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