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P6SMB6.8AT3G - onsemi

Description: 600 Watt Peak Power Zener Transient Voltage Suppressors

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P6SMB6.8AT3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SMB CASE 403A-03 ISSUE J
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P6SMB6.8AT3G - onsemi  - 3D model - Diodes Moulded - SMB CASE 403A-03 ISSUE J
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P6SMB6.8AT3G Details

  • Manufacturer Part Number:

    P6SMB6.8AT3G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    DO-214

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 403A-03, SMB, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    403A-03

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    7.14 V

  • Breakdown Voltage-Min:

    6.45 V

  • Breakdown Voltage-Nom:

    6.8 V

  • Clamping Voltage-Max:

    10.5 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    600 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.55 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    5.8 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

P6SMB6.8AT3G Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for P6SMB6.8AT3G can be found in the onsemi application note AND8327/D, which provides guidelines for PCB layout and assembly.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • While P6SMB6.8AT3G is primarily designed for low-frequency applications, it can be used in high-frequency circuits with proper PCB layout and component selection. However, the device's parasitic capacitance and inductance should be considered in the design.
  • To prevent ESD damage, it is recommended to follow proper ESD handling and assembly procedures, such as using ESD-protective packaging, wrist straps, and ionizers, and to ensure that the device is properly grounded during assembly.
  • The reverse standoff voltage rating of P6SMB6.8AT3G indicates the maximum voltage that can be applied in the reverse direction without causing damage. It is essential to ensure that the device is not subjected to voltages exceeding this rating to prevent damage or degradation.

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P6SMB6.8AT3G Overview

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