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PHB33NQ20T,118 - Nexperia

Description: MOSFET TRENCHMOS N-channel TrenchMOS standard level FET

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PHB33NQ20T,118 - Nexperia PCB footprint - Other - Other - PHB33NQ20T,118-1
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PHB33NQ20T,118 - Nexperia  - 3D model - Other - PHB33NQ20T,118-1
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PHB33NQ20T,118 Details

  • Manufacturer Part Number:

    PHB33NQ20T,118

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    D2PAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT404

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Avalanche Energy Rating (Eas):

    190 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    32.7 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Pulsed Drain Current-Max (IDM):

    65.4 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PHB33NQ20T,118 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PHB33NQ20T,118 is a standard SOT223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The maximum allowed voltage on the gate of PHB33NQ20T,118 is ±20V, but it's recommended to keep the gate voltage between -5V and +15V for optimal performance and reliability.
  • Yes, PHB33NQ20T,118 is suitable for high-frequency switching applications up to 100 kHz, but consider the device's switching losses, gate charge, and thermal performance when designing your application.
  • To protect PHB33NQ20T,118 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

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PHB33NQ20T,118 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PHB33NQ20T NXP Semiconductors

Power Field-Effect Transistor, 32.7A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET