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PJMD990N65EC - PANJIT

Description: Super Junction MOSFET (600-650V) - PJMD990N65EC, N Channel, 4.7A, 650V, TO-252AA

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PJMD990N65EC - PANJIT PCB footprint - Other - Other - PJMD990N65EC
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PJMD990N65EC Details

  • Manufacturer Part Number:

    PJMD990N65EC

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    4.7 A

  • Drain-source On Resistance-Max:

    0.99 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    47.5 W

  • Pulsed Drain Current-Max (IDM):

    9.5 A

  • Reference Standard:

    IEC-61249; MIL-STD-750

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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PJMD990N65EC Overview

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