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PJMF280N65E1_T0_00001 - PANJIT

Description: MOSFETs 22V,ESD Protection,SOT-23,UNI

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PCB Footprints
PJMF280N65E1_T0_00001 - PANJIT PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ITO-220AB-F
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3D Models
PJMF280N65E1_T0_00001 - PANJIT  - 3D model - Transistor Outline, Vertical - ITO-220AB-F
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PJMF280N65E1_T0_00001 Details

  • Manufacturer Part Number:

    PJMF280N65E1_T0_00001

  • Part Life Cycle Code:

    Active

  • Package Description:

    ITO-220AB-F, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    113 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    13.8 A

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TUBE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35.7 W

  • Pulsed Drain Current-Max (IDM):

    41.4 A

  • Reference Standard:

    IEC-61249; MIL-STD-750

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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PJMF280N65E1_T0_00001 Overview

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