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PJQ4403P_R2_00001 - PANJIT

Description: MOSFET /4403/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMP//PJ/DFN33338L-AS09/PJQ4403P-AS76/DFN33338L-AS01

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PJQ4403P_R2_00001 - PANJIT - PCB symbol
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PJQ4403P_R2_00001 - PANJIT PCB footprint - Other - Other - PJQ4403P_R2_00001-4
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PJQ4403P_R2_00001 - PANJIT - 3D model - Other - PJQ4403P_R2_00001-4
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PJQ4403P_R2_00001 Details

  • Manufacturer Part Number:

    PJQ4403P_R2_00001

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    DFN3333, 8 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9.8 A

  • Drain-source On Resistance-Max:

    0.0155 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PJQ4403P_R2_00001 Frequently Asked Questions (FAQs)

  • A symmetrical layout with thermal vias and a large copper area for heat dissipation is recommended. Ensure the drain pins are connected to a solid copper plane to minimize thermal resistance.
  • Monitor the device's voltage, current, and temperature to ensure operation within the specified SOA boundaries. Use a thermal management system to prevent overheating.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended to ensure fast switching and minimize power losses.
  • Use a shielded layout, keep the drain and source pins as close as possible, and add a common-mode choke or ferrite bead to reduce EMI emissions.
  • The maximum allowed voltage transient is 20V + (di/dt) x L, where di/dt is the current change rate and L is the inductance of the circuit. Ensure the device can withstand this transient voltage.

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PJQ4403P_R2_00001 Overview

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