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PMBT2369 - Nexperia

Description: PMBT2369, NPN Bipolar Transistor, 0.2 A 15 V HFE:20 500 MHz Small Signal, 3-Pin TO-236AB

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PCB Footprints
PMBT2369 - Nexperia PCB footprint - Other - Other - SOT23_(TO-236AB)
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3D Models
PMBT2369 - Nexperia  - 3D model - Other - SOT23_(TO-236AB)
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PMBT2369 Details

  • Manufacturer Part Number:

    PMBT2369

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1987-06-05

  • Manufacturer:

    Nexperia

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.2 A

  • Collector-Emitter Voltage-Max:

    15 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    500 MHz

  • Turn-off Time-Max (toff):

    20 ns

  • Turn-on Time-Max (ton):

    10 ns

PMBT2369 Frequently Asked Questions (FAQs)

  • Nexperia recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and a capacitor (e.g., 100 nF) in parallel. This helps to filter out noise and provides a stable gate voltage.
  • The maximum allowed power dissipation for PMBT2369 is 2.5 W. However, it's essential to consider the thermal resistance, ambient temperature, and heat sink design to ensure the device operates within the safe operating area.
  • While PMBT2369 is not optimized for high-frequency switching, it can be used up to 100 kHz. However, be aware of the increased power losses and potential for electromagnetic interference (EMI) at higher frequencies.
  • To protect the PMBT2369 from ESD, use proper handling and storage procedures, such as using an anti-static wrist strap, mat, or bag. Additionally, consider adding ESD protection devices, like TVS diodes, in the circuit design.

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PMBT2369 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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PMBT2369 Alternates

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Image Part Number Model
Part Image MPS2369RLRAG Rochester Electronics LLC

200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN

Part Image CMPT2369TR Central Semiconductor Corp

Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon

Part Image PMBT2369 NXP Semiconductors

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Part Image MMBT2369 Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Part Image MMBT2369LT3 onsemi

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

For a full list of alternate parts for PMBT2369, check out Findchips.com