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PMV213SN,215 - Nexperia

Description: MOSFET TAPE13 PWR-MOS

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PCB Footprints
PMV213SN,215 - Nexperia PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23 TO-236AB
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3D Models
PMV213SN,215 - Nexperia  - 3D model - SOT23 (3-Pin) - SOT23 TO-236AB
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PMV213SN,215 Details

  • Manufacturer Part Number:

    PMV213SN,215

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-236

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT23

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.9 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    7.6 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PMV213SN,215 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or a heat sink, using a large copper area for heat dissipation, and minimizing thermal resistance. A 2-3 layer PCB with a solid ground plane is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended derating curves for the device. Also, consider using a thermal interface material with a high thermal conductivity.
  • Handle the devices by the body, not the leads, to prevent damage. Store the devices in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and use anti-static packaging and handling procedures to prevent ESD damage.
  • To troubleshoot overheating or thermal shutdown issues, check for proper heat sinking, ensure good thermal contact between the device and the heat sink, and verify that the device is operated within the recommended temperature range. Also, check for any signs of physical damage or contamination.
  • The recommended soldering conditions for the PMV213SN and PMV215 are: peak temperature 260°C, soldering time 10 seconds, and a soldering iron temperature of 350°C. Use a solder with a melting point above 217°C and follow the recommended soldering profile.

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PMV213SN,215 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PMV213SN Philips Semiconductors

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Part Image PMV213SN NXP Semiconductors

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Part Image PMV213SN Nexperia

Power Field-Effect Transistor, 1.9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB