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PSMB050N10NS2 - PANJIT

Description: Medium Voltage MOSFET (60-200V,Rds(on)<1Ω) - PSMB050N10NS2 , N Polarity, Single, 120A, 100V, TO-263

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PSMB050N10NS2 Details

  • Manufacturer Part Number:

    PSMB050N10NS2

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, 3/2 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • Additional Feature:

    TUBE: 50

  • Avalanche Energy Rating (Eas):

    318 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.005 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    138 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Reference Standard:

    IEC-61249; MIL-STD-750

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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PSMB050N10NS2 Overview

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