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PSMN012-100YS,115 - Nexperia

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PSMN012-100YS,115 - Nexperia  - 3D model
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PSMN012-100YS,115 Details

  • Manufacturer Part Number:

    PSMN012-100YS,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    LFPAK-4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.85

  • Additional Feature:

    HIGH EFFICIENCY

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    149 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    242 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN012-100YS,115 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PSMN012-100YS,115 is a DPAK (TO-252) package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability, follow Nexperia's recommended thermal design guidelines, including proper heat sinking, thermal interface material selection, and PCB layout considerations. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The PSMN012-100YS,115 has an integrated ESD protection diode, but it's still recommended to follow standard ESD handling precautions during assembly and handling. A minimum of 2kV HBM (Human Body Model) and 100V MM (Machine Model) ESD protection is recommended.
  • While the PSMN012-100YS,115 is primarily designed for low-frequency switching applications, it can be used in high-frequency applications with proper design considerations. However, the device's switching performance and power losses may be affected at high frequencies. Consult Nexperia's application notes and simulation models for guidance.
  • Follow Nexperia's recommended soldering conditions: peak temperature of 260°C, soldering time of 10-30 seconds, and a maximum of 2 reflows. Ensure the PCB is designed for reflow soldering, and use a solder with a melting point above 217°C.

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PSMN012-100YS,115 Overview

Use the download button to access the PSMN012-100YS,115 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PSMN0, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PSMN012-100YS Nexperia

Power Field-Effect Transistor, 60A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235