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PSMN1R2-25YL,115 - Nexperia

Description: MOSFETs SOT1023 N-CH 25V 100A

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PCB Footprints
PSMN1R2-25YL,115 - Nexperia PCB footprint - Other - Other - (LFPAK56E); 4 leads SOT1023
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3D Models
PSMN1R2-25YL,115 - Nexperia  - 3D model - Other - (LFPAK56E); 4 leads SOT1023
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PSMN1R2-25YL,115 Details

  • Manufacturer Part Number:

    PSMN1R2-25YL,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    ROHS COMPLIANT, PLASTIC, LFPAK-4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT1023

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.3

  • Additional Feature:

    HIGH EFFICIENCY

  • Avalanche Energy Rating (Eas):

    677 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.00185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    644 pF

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    121 W

  • Pulsed Drain Current-Max (IDM):

    815 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN1R2-25YL,115 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PSMN1R2-25YL,115 is a SOA (Small Outline Automotive) package with a 3-pin configuration. The recommended land pattern is available in the Nexperia package outline drawing.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowed voltage on the gate of PSMN1R2-25YL,115 is ±20V. Exceeding this voltage may damage the device.
  • Yes, PSMN1R2-25YL,115 is suitable for high-frequency switching applications up to 100 kHz. However, it is essential to consider the device's switching losses, gate charge, and parasitic inductance when designing the circuit.
  • To protect PSMN1R2-25YL,115 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider adding ESD protection devices, such as TVS diodes, in the circuit design.

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PSMN1R2-25YL,115 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Power Field-Effect Transistor, 100A I(D), 25V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET