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PSMN1R7-25YLDX - Nexperia

Description: NEXPERIA - PSMN1R7-25YLDX - MOSFET, N-CH, 25V, 100A, SOT-669-4

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PSMN1R7-25YLDX Details

  • Manufacturer Part Number:

    PSMN1R7-25YLDX

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    SOP-8, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.3

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    746 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.00242 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    208 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Pulsed Drain Current-Max (IDM):

    860 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN1R7-25YLDX Frequently Asked Questions (FAQs)

  • Nexperia provides a recommended PCB footprint in their application note AN11173, which includes a land pattern and soldering guidelines for the SOT669 package.
  • To ensure reliable operation, follow Nexperia's guidelines for thermal management, including proper heat sinking, thermal interface materials, and derating the device's power dissipation according to the ambient temperature.
  • Although the datasheet doesn't specify a maximum gate voltage, Nexperia recommends limiting the gate voltage to ±20V to prevent damage to the device's internal gate oxide.
  • Yes, but be aware that the device's switching characteristics, such as rise and fall times, may affect the overall system performance. Consult Nexperia's application notes and simulation models to ensure the device meets your specific requirements.
  • Follow standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation, and ensure that the device is properly grounded during handling and assembly.

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PSMN1R7-25YLDX Overview

Use the download button to access the PSMN1R7-25YLDX 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PSMN1, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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