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PSMN4R0-40YS,115 - Nexperia

Description: MOSFET N-CH 40V 4.2 mOhm Standard MOSFET

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PCB Footprints
PSMN4R0-40YS,115 - Nexperia PCB footprint - Other - Other - LFPAK56; PowerSO8 (SOT669)_Height=1.2mm
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3D Models
PSMN4R0-40YS,115 - Nexperia  - 3D model - Other - LFPAK56; PowerSO8 (SOT669)_Height=1.2mm
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PSMN4R0-40YS,115 Details

  • Manufacturer Part Number:

    PSMN4R0-40YS,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SOIC

  • Package Description:

    PLASTIC, LFPAK-4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • Country Of Origin:

    Malaysia, Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    3

  • Additional Feature:

    HIGH EFFICIENCY

  • Avalanche Energy Rating (Eas):

    77 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    266 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    106 W

  • Pulsed Drain Current-Max (IDM):

    472 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN4R0-40YS,115 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PSMN4R0-40YS,115 is a DPAK (TO-252) package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The maximum allowed voltage on the gate of PSMN4R0-40YS,115 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation.
  • To protect PSMN4R0-40YS,115 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
  • The recommended storage condition for PSMN4R0-40YS,115 is in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%.

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PSMN4R0-40YS,115 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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