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QH8KA1TCR - ROHM Semiconductor

Description: MOSFET 2N-CH 30V 4.5A TSMT8

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QH8KA1TCR - ROHM Semiconductor PCB footprint - Other - Other - QH8KA1TCR-1
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3D Models
QH8KA1TCR - ROHM Semiconductor  - 3D model - Other - QH8KA1TCR-1
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QH8KA1TCR Details

  • Manufacturer Part Number:

    QH8KA1TCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.32

  • Avalanche Energy Rating (Eas):

    0.65 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain-source On Resistance-Max:

    0.073 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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QH8KA1TCR Overview

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