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R6004PND3FRATL - ROHM Semiconductor

Description: 600V 4A TO-252, Automotive Power MOSFET

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R6004PND3FRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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3D Models
R6004PND3FRATL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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R6004PND3FRATL Details

  • Manufacturer Part Number:

    R6004PND3FRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    23 Weeks

  • Date Of Intro:

    2019-09-09

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.3

  • Avalanche Energy Rating (Eas):

    1.1 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    1.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, EMBOSSED, 13 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6004PND3FRATL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • ROHM recommends following the derating curves in the datasheet, and ensuring good thermal design and heat dissipation. Additionally, consider using a heat sink or thermal interface material to reduce junction temperature.
  • The maximum allowed voltage on the enable pin (EN) is 6V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, the R6004PND3FRATL is suitable for switching regulator applications due to its low RDS(on) and high-speed switching capabilities. However, ensure that the device is properly driven and the PCB is designed to minimize parasitic inductance and capacitance.
  • The internal diode can be handled by adding an external Schottky diode in parallel with the MOSFET, or by using a MOSFET with an integrated Schottky diode. This helps to reduce voltage spikes and ringing during switching.

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R6004PND3FRATL Overview

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