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R6006JNJGTL - ROHM Semiconductor

Description: 600V 6A TO-263, PrestoMOS™ with integrated high-speed diode

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R6006JNJGTL - ROHM Semiconductor PCB footprint - Other - Other - LPTS_Master
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R6006JNJGTL Details

  • Manufacturer Part Number:

    R6006JNJGTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SC-83, TO-263S, D2PAK-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-11-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    117 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.936 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6006JNJGTL Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the R6006JNJGTL is -40°C to 105°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet. Additionally, consider the input and output impedance of the surrounding circuitry to prevent signal degradation. It's also crucial to provide a stable power supply and decouple the device with suitable capacitors.
  • The maximum power dissipation (PD) for the R6006JNJGTL is 1.5W. To calculate PD, use the formula: PD = (VIN x IIN) + (VOUT x IOUT), where VIN and IIN are the input voltage and current, and VOUT and IOUT are the output voltage and current, respectively. Ensure that the calculated PD does not exceed the recommended maximum value.
  • Yes, the R6006JNJGTL can be used in high-frequency applications, but it's essential to consider the device's bandwidth and frequency response. The datasheet specifies a bandwidth of 10MHz, but the actual frequency response may vary depending on the specific application and circuit design. Be sure to evaluate the device's performance in your specific use case and consider any necessary filtering or compensation.
  • The R6006JNJGTL has built-in ESD protection, but it's still crucial to follow proper handling and assembly procedures to prevent damage. Use an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. During assembly, avoid touching the device's pins or exposing it to static electricity.

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