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R6015ANX - ROHM Semiconductor

Description: 10V Drive Nch MOSFET: MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.

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PCB Footprints
R6015ANX - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO_220FM
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R6015ANX - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO_220FM
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R6015ANX Details

  • Manufacturer Part Number:

    R6015ANX

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220FM, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    15 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6015ANX Frequently Asked Questions (FAQs)

  • A good PCB layout for the R6015ANX should include a solid ground plane, separate analog and digital grounds, and a decoupling capacitor (e.g., 10uF) between VIN and GND. Additionally, keep the input and output traces short and away from noise sources.
  • The output capacitor should be chosen based on the output voltage and current requirements. A general rule of thumb is to use a capacitor with a capacitance value of at least 10uF and a voltage rating of 1.5 to 2 times the output voltage. For example, for a 5V output, use a 10uF capacitor with a 10V or 16V rating.
  • The R6015ANX can handle input voltages up to 36V, but it's recommended to keep the input voltage below 32V to ensure stable operation and prevent overheating.
  • The output voltage of the R6015ANX can be adjusted by changing the resistance ratio of the feedback resistors (R1 and R2). Use the formula: Vout = 1.25V x (1 + R2/R1) to calculate the output voltage. For example, to get a 3.3V output, use R1 = 1kΩ and R2 = 1.8kΩ.
  • The thermal derating curve for the R6015ANX is typically provided in the datasheet. As a general guideline, the device can operate up to 125°C, but the output current should be derated by 50% for every 10°C increase above 85°C.

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