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R6030KNZ4C13 - ROHM Semiconductor

Description: 600V 30A TO-247, High-speed switching Power MOSFET

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R6030KNZ4C13 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_
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R6030KNZ4C13 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247_
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R6030KNZ4C13 Details

  • Manufacturer Part Number:

    R6030KNZ4C13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2019-11-15

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    636 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TUBE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    305 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6030KNZ4C13 Frequently Asked Questions (FAQs)

  • The thermal resistance (θJA) of the R6030KNZ4C13 is typically around 30°C/W, but it can vary depending on the PCB design, layout, and environmental conditions.
  • While the R6030KNZ4C13 has an operating temperature range of -40°C to 105°C, it's essential to consider the derating curve and ensure the device doesn't exceed its maximum junction temperature (Tj) of 150°C to maintain reliability and performance.
  • To ensure stability, follow the recommended PCB layout guidelines, use a suitable output capacitor (e.g., 10uF ceramic), and consider adding a 1nF to 10nF capacitor between the VOUT and ADJ pins to improve noise immunity and stability.
  • The R6030KNZ4C13 requires a minimum input voltage of 2.5V to maintain regulation, but it's recommended to ensure a minimum input voltage of 3V to account for voltage drops and variations.
  • Yes, the R6030KNZ4C13 is suitable for battery-powered devices due to its low quiescent current (IQ) of 30uA and low dropout voltage (VDO) of 0.2V, making it an efficient choice for battery-powered applications.

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R6030KNZ4C13 Overview

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