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R6047KNZ4C13 - ROHM Semiconductor

Description: 600V 47A TO-247, High-speed switching Power MOSFET

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R6047KNZ4C13 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_
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R6047KNZ4C13 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247_
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R6047KNZ4C13 Details

  • Manufacturer Part Number:

    R6047KNZ4C13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2018-10-10

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    1135 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    47 A

  • Drain-source On Resistance-Max:

    0.072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    141 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6047KNZ4C13 Frequently Asked Questions (FAQs)

  • The thermal resistance (θJA) of the R6047KNZ4C13 is typically around 30°C/W, but it can vary depending on the PCB design, layout, and environment. It's essential to consider thermal management when designing with this component.
  • The R6047KNZ4C13 has an operating temperature range of -40°C to 105°C. While it can tolerate high temperatures, it's crucial to ensure that the junction temperature (TJ) does not exceed 150°C to prevent damage or degradation. Proper thermal design and heat sinking may be necessary for high-temperature applications.
  • To ensure stability and prevent oscillation, follow the recommended layout and component placement guidelines in the datasheet. Additionally, use a suitable output capacitor with a low ESR (Equivalent Series Resistance) and a minimum capacitance of 10uF. A 10nF to 100nF ceramic capacitor can also be added in parallel to the output capacitor to improve stability.
  • The R6047KNZ4C13 has a maximum input voltage rating of 36V. Exceeding this voltage can cause damage to the device. It's essential to ensure that the input voltage remains within the recommended range to maintain the device's reliability and performance.
  • Yes, the R6047KNZ4C13 is suitable for battery-powered devices due to its low quiescent current (IQ) of 1.5mA (typical) and low dropout voltage (VDO) of 0.23V (typical). However, consider the device's power consumption and battery life requirements when designing your system.

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R6047KNZ4C13 Overview

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