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R6511KND3TL1 - ROHM Semiconductor

Description: High-speed Switching, Nch 650V 11A Power MOSFET

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R6511KND3TL1 - ROHM Semiconductor - PCB symbol
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R6511KND3TL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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R6511KND3TL1 - ROHM Semiconductor - 3D model - Other - TO-252 (DPAK)_Master
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R6511KND3TL1 Details

  • Manufacturer Part Number:

    R6511KND3TL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    223 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TAPE, EMBOSSED

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    124 W

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6511KND3TL1 Frequently Asked Questions (FAQs)

  • The thermal resistance (θJA) of the R6511KND3TL1 is 125°C/W, which is not explicitly mentioned in the datasheet. This information can be obtained from ROHM's technical support or application notes.
  • To ensure stability with the R6511KND3TL1, it's essential to follow the recommended PCB layout and component placement guidelines, use a suitable output capacitor with low ESR, and add a 10nF ceramic capacitor between the VIN and GND pins.
  • While the R6511KND3TL1 has a maximum operating temperature of 125°C, it's recommended to derate the output current and voltage according to the temperature derating curve provided in the datasheet to ensure reliable operation.
  • ROHM recommends using a 10uF to 22uF ceramic capacitor with a voltage rating of 10V or higher as the input capacitor (CIN) for the R6511KND3TL1.
  • The output voltage of the R6511KND3TL1 can be calculated using the formula: VOUT = 0.8V x (1 + (R1/R2)), where R1 and R2 are the resistors used in the feedback network.

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R6511KND3TL1 Overview

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