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R8003KND3TL1 - ROHM Semiconductor

Description: High-speed Switching Nch 800V 3A Power MOSFET

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R8003KND3TL1 - ROHM Semiconductor - PCB symbol
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PCB Footprints
R8003KND3TL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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R8003KND3TL1 - ROHM Semiconductor - 3D model - Other - TO-252 (DPAK)_Master
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R8003KND3TL1 Details

  • Manufacturer Part Number:

    R8003KND3TL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPKA-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-11-15

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    19 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    1.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R8003KND3TL1 Frequently Asked Questions (FAQs)

  • The thermal resistance (junction-to-ambient) of the R8003KND3TL1 is typically around 30°C/W, but it can vary depending on the PCB layout, airflow, and other environmental factors.
  • The R8003KND3TL1 has an operating temperature range of -40°C to 105°C, but it's recommended to derate the output current and voltage at higher temperatures to ensure reliability and prevent overheating.
  • To ensure stability, follow the recommended PCB layout and component placement guidelines, use a suitable output capacitor with low ESR, and add a 10nF to 100nF ceramic capacitor between the VIN and GND pins to filter out noise.
  • The R8003KND3TL1 can operate with an input voltage as low as 2.5V, but it's recommended to maintain a minimum input voltage of 3V to ensure stable operation and prevent dropout.
  • Yes, the R8003KND3TL1 is suitable for battery-powered devices due to its low quiescent current (IQ) of 1.5mA and low dropout voltage, making it an efficient choice for battery-powered applications.

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R8003KND3TL1 Overview

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