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RA07M3847M-501 - Mitsubishi

Description: RF MOSFET-Module 7.2V 7W (378-470MHz) H46S-Pkg.

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PCB Footprints
RA07M3847M-501 - Mitsubishi PCB footprint - Other - Other - RA07M3847M-501-2
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3D Models
RA07M3847M-501 - Mitsubishi  - 3D model - Other - RA07M3847M-501-2
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RA07M3847M-501 Details

  • Manufacturer Part Number:

    RA07M3847M-501

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Manufacturer:

    Mitsubishi Electric

  • YTEOL:

    6

  • RF/Microwave Device Type:

    NARROW BAND HIGH POWER

RA07M3847M-501 Frequently Asked Questions (FAQs)

  • The thermal resistance of the RA07M3847M-501 is typically around 2.5°C/W (junction-to-case) and 10°C/W (junction-to-ambient) at a maximum junction temperature of 150°C.
  • While the RA07M3847M-501 is designed to operate in a wide range of temperatures, it's not recommended for use in high-humidity environments (> 80% RH) without proper protection, such as conformal coating or hermetic sealing, to prevent moisture-related failures.
  • Mitsubishi Electric recommends a PCB layout with a large copper area for heat dissipation, and thermal vias to improve heat transfer. A thermal interface material (TIM) can also be used to reduce thermal resistance between the device and the heat sink.
  • To ensure reliability and longevity, follow proper design and assembly guidelines, including derating the device's power rating, using a suitable heat sink, and implementing overvoltage and overcurrent protection. Regular cleaning and maintenance of the device and its surroundings are also recommended.
  • Yes, the RA07M3847M-501 can be used in a parallel configuration to increase power handling, but it's essential to ensure that the devices are properly matched and synchronized to prevent uneven current sharing and potential reliability issues.

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RA07M3847M-501 Overview

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