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RA18H1213G-101 - Mitsubishi

Description: RF MOSFET-Module 12.5V 18W (1240-1300MHz) H2S-Pkg

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RA18H1213G-101 - Mitsubishi PCB footprint - Other - Other - RA18H1213G-101-4
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RA18H1213G-101 - Mitsubishi  - 3D model - Other - RA18H1213G-101-4
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RA18H1213G-101 Details

  • Manufacturer Part Number:

    RA18H1213G-101

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, H2S, 4 PIN

  • Manufacturer:

    Mitsubishi Electric

  • YTEOL:

    0

  • Characteristic Impedance:

    50 Ω

  • Construction:

    MODULE

  • Gain:

    23 dB

  • Input Power-Max (CW):

    24.77 dBm

  • Number of Functions:

    1

  • Operating Frequency-Max:

    1300 MHz

  • Operating Frequency-Min:

    1240 MHz

  • Operating Temperature-Max:

    110 °C

  • Operating Temperature-Min:

    -30 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Equivalence Code:

    FLNG,2.4"H.SPACE

  • Power Supplies:

    5,12.5 V

  • RF/Microwave Device Type:

    NARROW BAND HIGH POWER

  • Technology:

    HYBRID

  • VSWR-Max:

    3

RA18H1213G-101 Frequently Asked Questions (FAQs)

  • Mitsubishi Electric recommends a 4-layer PCB with a thermal relief pattern on the bottom layer to dissipate heat. A minimum of 1 oz copper thickness is recommended. Additionally, a thermal pad on the bottom of the package should be connected to a heat sink or a thermal relief area on the PCB.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the power dissipation of the RA18H1213G-101 according to the temperature derating curve provided in the datasheet. Additionally, a heat sink or thermal management system should be implemented to keep the junction temperature below 150°C.
  • Mitsubishi Electric recommends a peak soldering temperature of 260°C for a maximum of 10 seconds. The device should be soldered using a solder with a melting point of 217°C or higher. A soldering iron with a temperature control system is recommended to prevent overheating.
  • The RA18H1213G-101 is sensitive to electrostatic discharge. To prevent ESD damage, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and personnel are grounded. Additionally, an ESD protection diode or network can be added to the PCB design.
  • The RA18H1213G-101 should be stored in a dry, cool place away from direct sunlight. The storage temperature should be between -40°C and 30°C, and the humidity should be below 60%. The device should be handled with care to prevent mechanical damage and electrostatic discharge.

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