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RB088T150NZC9 - ROHM Semiconductor

Description: Diode Array 1 Pair Common Cathode Schottky 150 V 10A Through Hole TO-220-3 Full Pack

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PCB Footprints
RB088T150NZC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-220fn
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3D Models
RB088T150NZC9 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - to-220fn
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RB088T150NZC9 Details

  • Manufacturer Part Number:

    RB088T150NZC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220FN, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    ISOLATED

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.88 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    150 V

  • Reverse Current-Max:

    15 µA

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RB088T150NZC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of 2.5mm x 2.5mm with a minimum of 1oz copper thickness and a thermal via diameter of 0.3mm to ensure optimal heat dissipation.
  • To ensure SOA, monitor the device's voltage, current, and power dissipation. Use the datasheet's SOA graph to determine the maximum allowable values for each parameter. Implement overvoltage, overcurrent, and thermal protection mechanisms to prevent damage.
  • The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10Ω to 100Ω to ensure stable switching and minimize ringing. Consult the datasheet and application notes for more information.
  • Yes, the RB088T150NZC9 is suitable for high-frequency switching applications up to 1MHz. However, ensure that the PCB layout, gate drive, and thermal management are optimized for high-frequency operation to minimize losses and prevent overheating.
  • The internal diode can cause voltage spikes during switching. To mitigate this, use a snubber circuit or a diode clamp to absorb the voltage spikes. Additionally, ensure the gate drive is properly designed to minimize the diode's impact on the switching waveform.

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RB088T150NZC9 Overview

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