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RB751S40T5G - onsemi

Description: Extremely Fast Switching Speed; Extremely Low Forward Voltage: 0.28 V (Typ) @ IF = 1.0 mAdc; Low Reverse Current; Lead−Free Plating; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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RB751S40T5G - onsemi - PCB symbol
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RB751S40T5G - onsemi PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - RB751S40T5G-1
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RB751S40T5G - onsemi - 3D model - Small Outline Diode Flat Lead - RB751S40T5G-1
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RB751S40T5G Details

  • Manufacturer Part Number:

    RB751S40T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-523-2

  • Manufacturer Package Code:

    502

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Application:

    FAST RECOVERY

  • Breakdown Voltage-Min:

    30 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.37 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    0.5 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.03 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.2 W

  • Rep Pk Reverse Voltage-Max:

    40 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

RB751S40T5G Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. Ensure a minimum of 1 oz copper thickness and a 1-inch square copper pour on the bottom layer for optimal thermal performance.
  • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and maintain a maximum junction temperature (Tj) of 150°C. Also, consider derating the device's power handling at high temperatures.
  • A gate drive circuit with a low impedance output stage, a voltage swing of 10-15V, and a current capability of at least 1A is recommended. Ensure a low inductance path between the gate drive and the device's gate terminal.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect against overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • Use a human body model (HBM) ESD protection circuit with a minimum of 2 kV rating. Ensure the ESD protection circuit is connected between the device's pins and the PCB's ground plane.

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RB751S40T5G Overview

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RB751S40T5G Alternates

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