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RBQ30NS100ATL - ROHM Semiconductor

Description: Schottky Barrier Diode,VR 100V,Io 30A,IFSM 100A,TO-263S (D2PAK).

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RBQ30NS100ATL - ROHM Semiconductor - PCB symbol
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RBQ30NS100ATL - ROHM Semiconductor PCB footprint - Other - Other - LPDS_Master
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RBQ30NS100ATL - ROHM Semiconductor - 3D model - Other - LPDS_Master
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RBQ30NS100ATL Details

  • Manufacturer Part Number:

    RBQ30NS100ATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263S, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-07-13

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.38

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.77 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    200 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RBQ30NS100ATL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of 2.5mm x 2.5mm with a minimum of 1oz copper thickness and a thermal via array underneath the pad to ensure optimal heat dissipation.
  • The RBQ30NS100ATL requires a bias voltage of 10V to 30V, and the recommended bias current is 1mA to 10mA. Ensure the bias circuit is designed to provide a stable voltage and current within these ranges.
  • ROHM recommends using a TVS diode or a zener diode with a voltage rating of 30V or higher to protect the RBQ30NS100ATL from electrostatic discharge (ESD).
  • The RBQ30NS100ATL is designed for low-frequency applications up to 100kHz. For high-frequency applications, ROHM recommends using a different device, such as the RBQ30NS100HTL, which is designed for high-frequency use.
  • ROHM recommends using a heat sink with a thermal resistance of 10°C/W or lower to ensure the device operates within its specified temperature range. Additionally, ensure the PCB design allows for adequate airflow and heat dissipation.

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RBQ30NS100ATL Overview

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