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RBQ30NS65AFHTL - ROHM Semiconductor

Description: Schottky Diodes & Rectifiers 65V Vr 30A Io SBD TO-263S(D2PAK) 15A

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RBQ30NS65AFHTL - ROHM Semiconductor PCB footprint - Other - Other - LPDS_Master
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RBQ30NS65AFHTL - ROHM Semiconductor  - 3D model - Other - LPDS_Master
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RBQ30NS65AFHTL Details

  • Manufacturer Part Number:

    RBQ30NS65AFHTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-83, TO-263S, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.38

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.69 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    65 V

  • Reverse Current-Max:

    200 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RBQ30NS65AFHTL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of 2.5mm x 2.5mm with a thermal via diameter of 0.5mm, and a minimum of 5 thermal vias. Additionally, a solid copper plane on the bottom layer can help to dissipate heat efficiently.
  • The RBQ30NS65AFHTL requires a bias voltage of 5V to 15V, with a recommended operating voltage of 12V. Ensure the bias voltage is stable and within the recommended range to achieve optimal performance.
  • The maximum allowed power dissipation for the RBQ30NS65AFHTL is 30W. Exceeding this limit can lead to device failure or reduced lifespan.
  • Yes, the RBQ30NS65AFHTL is suitable for high-frequency switching applications up to 100kHz. However, ensure proper PCB layout, decoupling, and snubber circuits are implemented to minimize ringing and EMI.
  • Handle the device with ESD-safe materials and tools, and ensure the device is stored in an ESD-safe environment. Implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in the system design.

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RBQ30NS65AFHTL Overview

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