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RBQ30T65ANZ - ROHM Semiconductor

Description: Low I<sub>R</sub>, 65V, 30A, ITO-220AB, Schottky Barrier Diode

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PCB Footprints
RBQ30T65ANZ - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FN-4
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3D Models
RBQ30T65ANZ - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220FN-4
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RBQ30T65ANZ Details

  • Manufacturer Part Number:

    RBQ30T65ANZ

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220FN, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-10-01

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    ISOLATED

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.69 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    30 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    65 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    65 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

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This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
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RBQ30T65ANZ Overview

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