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RD3G07BATTL1 - ROHM Semiconductor

Description: Pch -40V -70A Power MOSFET

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Symbol
RD3G07BATTL1 - ROHM Semiconductor - PCB symbol
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PCB Footprints
RD3G07BATTL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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3D Models
RD3G07BATTL1 - ROHM Semiconductor - 3D model - Other - TO-252 (DPAK)_Master
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RD3G07BATTL1 Details

  • Manufacturer Part Number:

    RD3G07BATTL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Date Of Intro:

    2020-11-05

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    88 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.0071 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    485 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, EMBOSSED, 13 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    101 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3G07BATTL1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1mm clearance around the device for airflow.
  • Implement a heat sink or thermal interface material, and ensure good airflow around the device. Also, consider derating the device's power dissipation according to the temperature derating curve in the datasheet.
  • The RD3G07BATTL1 has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and storage. For latch-up prevention, ensure that the device is not exposed to excessive voltage or current, and follow the recommended operating conditions.
  • Yes, the RD3G07BATTL1 is AEC-Q101 qualified, making it suitable for automotive applications. However, ensure that you follow the recommended operating conditions and design guidelines to ensure high reliability.
  • Follow the recommended soldering conditions: peak temperature 260°C, soldering time 10 seconds, and use a solder with a melting point above 217°C. Ensure that the device is not exposed to excessive thermal stress during the soldering process.

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RD3G07BATTL1 Overview

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