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RD3P050SNFRATL - ROHM Semiconductor

Description: Automotive Nch 100V 5A Power MOSFET

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RD3P050SNFRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3P050SNFRATL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3P050SNFRATL Details

  • Manufacturer Part Number:

    RD3P050SNFRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-08-27

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.205 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3P050SNFRATL Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure stable operation, ROHM recommends a soft-start circuit to limit inrush current during power-up, and a slow power-down sequence to prevent voltage overshoot. Additionally, a bulk capacitor of at least 10uF is recommended to filter out voltage transients.
  • ROHM recommends keeping the input voltage deviation within ±10% of the nominal input voltage to ensure stable operation and prevent damage to the device.
  • While the RD3P050SNFRATL is rated for operation up to 125°C, ROHM recommends derating the output current and power dissipation to ensure reliable operation in high-temperature environments. Consult the datasheet for derating curves and guidelines.
  • ROHM recommends using a thermal camera to monitor the device temperature, and an oscilloscope to analyze the input and output voltage waveforms. Additionally, checking the PCB layout and thermal design for any potential issues or bottlenecks is recommended.

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RD3P050SNFRATL Overview

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Part Image RD3P050SNTL ROHM Semiconductor

Power Field-Effect Transistor, 5A I(D), 100V, 0.205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252