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RD3P07BBHTL1 - ROHM Semiconductor

Description: MOSFET RD3P07BBH is a power MOSFET with low on-resistance and high power package, suitable for switching.

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PCB Footprints
RD3P07BBHTL1 - ROHM Semiconductor PCB footprint - Other - Other - DPAK TO-252
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RD3P07BBHTL1 - ROHM Semiconductor  - 3D model - Other - DPAK TO-252
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RD3P07BBHTL1 Details

  • Manufacturer Part Number:

    RD3P07BBHTL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    89 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3P07BBHTL1 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm with multiple vias to the ground plane to ensure efficient heat dissipation. Additionally, keeping the PCB layer stack-up symmetrical and using a solid ground plane can help reduce thermal resistance.
  • To ensure the device operates within the SOA, monitor the voltage, current, and power dissipation. Use the maximum ratings specified in the datasheet as a guideline, and consider derating the device based on the application's operating conditions. ROHM also provides a thermal simulation tool to help estimate the device's junction temperature.
  • ROHM recommends a soldering profile with a peak temperature of 260°C (500°F) and a dwell time of 10-30 seconds. The device is compatible with lead-free soldering processes, and ROHM provides a detailed soldering guide in their application notes.
  • To prevent ESD damage, handle the device with an anti-static wrist strap or mat, and ensure that the assembly process is ESD-controlled. ROHM recommends using an ESD protection device or a TVS diode in the circuit design to protect the device from ESD events.
  • The RD3P07BBHTL1 is designed to withstand short-circuit events, but it's essential to ensure that the device is used within the specified current and voltage ratings. In the event of a short circuit, the device may enter a high-impedance state to prevent damage. ROHM recommends incorporating overcurrent protection and short-circuit detection mechanisms in the circuit design.

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RD3P07BBHTL1 Overview

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