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RD3P130SPFRATL - ROHM Semiconductor

Description: Automotive Pch -100V -13A Power MOSFET

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RD3P130SPFRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3P130SPFRATL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3P130SPFRATL Details

  • Manufacturer Part Number:

    RD3P130SPFRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-07-04

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.23 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3P130SPFRATL Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a large copper area connected to the thermal pad, and to use thermal vias to dissipate heat to the other side of the board. Additionally, keeping the thermal pad away from other components and traces can help reduce thermal resistance.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, and make sure to provide a stable voltage supply to the device. Additionally, decoupling capacitors should be placed close to the device to reduce noise and ensure stable operation.
  • When handling the device, take precautions to prevent electrostatic discharge (ESD) damage by using an ESD wrist strap or mat, and avoid touching the pins or leads. Also, avoid bending or flexing the leads, and handle the device by the body or pins, not the leads.
  • To determine the optimal input and output capacitors, consider the operating frequency, output current, and ripple requirements of your application. A general rule of thumb is to use capacitors with a capacitance value of 10-22uF for input and output filtering. However, it's recommended to consult the datasheet and application notes for specific guidance.
  • Thermal design considerations for this device include providing a heat sink or thermal pad, ensuring good airflow, and keeping the device away from other heat sources. The device's thermal resistance (Rth) should also be considered when designing the thermal management system.

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RD3P130SPFRATL Overview

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Part Image RD3P130SPTL1 ROHM Semiconductor

Power Field-Effect Transistor, 13A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252