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RF101L4STE25 - ROHM Semiconductor

Description: Fast Recovery Diode: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.

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PCB Footprints
RF101L4STE25 - ROHM Semiconductor PCB footprint - Diodes Moulded - Diodes Moulded - PMDS
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RF101L4STE25 - ROHM Semiconductor  - 3D model - Diodes Moulded - PMDS
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RF101L4STE25 Details

  • Manufacturer Part Number:

    RF101L4STE25

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOD-106, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.25 V

  • JESD-30 Code:

    R-PDSO-C2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    20 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Reverse Recovery Time-Max:

    0.025 µs

  • Surface Mount:

    YES

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

RF101L4STE25 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The RF signal traces should be kept short and away from noise sources. A microstrip or coplanar waveguide layout is suitable for this device.
  • The device requires a bias voltage of 2.5V to 5.5V. A voltage regulator or a voltage divider network can be used to generate the bias voltage. Ensure the bias voltage is stable and noise-free to prevent performance degradation.
  • The maximum power handling capability of the RF101L4STE25 is 25 dBm (316 mW). Exceeding this power level may cause damage to the device or affect its performance.
  • The RF101L4STE25 has an input/output impedance of 50 ohms. To match the impedance, use a pi-network or a T-network matching circuit. The matching circuit should be designed to optimize the return loss and insertion loss.
  • The operating temperature range of the RF101L4STE25 is -40°C to 85°C. Operating the device outside this range may affect its performance or reduce its lifespan.

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RF101L4STE25 Overview

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