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RF101LAM2STR - ROHM Semiconductor

Description: RF101LAM2S is low VF and low switching loss Fast Recovery Diode which is suitable for general rectification.

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Symbol
RF101LAM2STR - ROHM Semiconductor - PCB symbol
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PCB Footprints
RF101LAM2STR - ROHM Semiconductor PCB footprint - Other - Other - RF101LAM2STR-1
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3D Models
RF101LAM2STR - ROHM Semiconductor - 3D model - Other - RF101LAM2STR-1
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RF101LAM2STR Details

  • Manufacturer Part Number:

    RF101LAM2STR

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2017-03-13

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    9

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Recovery Time-Max:

    0.025 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

RF101LAM2STR Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The RF signal traces should be kept short and away from noise sources. A microstrip or coplanar waveguide layout is suitable for this device.
  • The device requires a bias voltage of 2.7V to 5.5V. A voltage regulator or a voltage divider network can be used to generate the bias voltage. Ensure the bias voltage is stable and noise-free to prevent performance degradation.
  • The maximum power handling capability of the RF101LAM2STR is 30 dBm (1W). Exceeding this power level may cause damage to the device or affect its performance.
  • The RF101LAM2STR has an input impedance of 50 ohms. To match the impedance, use a pi-network or a T-network matching circuit. The matching circuit should be designed to provide a conjugate match to the device's input impedance.
  • The operating temperature range of the RF101LAM2STR is -40°C to 85°C. Operating the device outside this range may affect its performance or reduce its lifespan.

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RF101LAM2STR Overview

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