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RF201L4STE25 - ROHM Semiconductor

Description: Fast Recovery Diode: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.

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RF201L4STE25 - ROHM Semiconductor - PCB symbol
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RF201L4STE25 - ROHM Semiconductor PCB footprint - Diodes Moulded - Diodes Moulded - PMDS
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RF201L4STE25 - ROHM Semiconductor - 3D model - Diodes Moulded - PMDS
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RF201L4STE25 Details

  • Manufacturer Part Number:

    RF201L4STE25

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOD-106, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Breakdown Voltage-Min:

    400 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.2 V

  • JESD-30 Code:

    R-PDSO-C2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    1.5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Reverse Current-Max:

    1 µA

  • Reverse Recovery Time-Max:

    0.03 µs

  • Reverse Test Voltage:

    400 V

  • Surface Mount:

    YES

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

RF201L4STE25 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The RF201L4STE25 should be placed near the edge of the board to minimize radiation losses. A microstrip line or a coplanar waveguide should be used to connect the RF input/output to the antenna or other components.
  • The RF201L4STE25 requires a bias voltage of 2.5V to 5.5V. A voltage regulator or a low-dropout regulator (LDO) should be used to regulate the voltage supply. The bias voltage should be decoupled with a 10nF capacitor to reduce noise and ensure stable operation.
  • The RF201L4STE25 can handle a maximum input power of +20dBm (100mW). Exceeding this power limit may cause damage to the device or affect its performance.
  • The RF201L4STE25 has an input/output impedance of 50 ohms. A pi-network or a T-network can be used to match the impedance of the device to the antenna or other components. The impedance matching network should be designed to minimize reflections and ensure maximum power transfer.
  • The RF201L4STE25 operates over a temperature range of -40°C to +85°C. However, the device's performance may degrade at extreme temperatures. It is recommended to operate the device within a temperature range of 0°C to +70°C for optimal performance.

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RF201L4STE25 Overview

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