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RF4E110BNTR - ROHM Semiconductor

Description: 4.5V Drive Nch MOSFET

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Symbol
RF4E110BNTR - ROHM Semiconductor - PCB symbol
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PCB Footprints
RF4E110BNTR - ROHM Semiconductor PCB footprint - Other - Other - DFN2020-8S_2022-5
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3D Models
RF4E110BNTR - ROHM Semiconductor - 3D model - Other - DFN2020-8S_2022-5
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RF4E110BNTR Details

  • Manufacturer Part Number:

    RF4E110BNTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0154 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RF4E110BNTR Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces as short as possible and use 50-ohm impedance-controlled lines. Avoid vias and right-angle bends in the RF signal path.
  • The RF4E110BNTR requires a 3.3V power supply and a bias voltage of 1.8V to 3.3V. Ensure the bias voltage is stable and noise-free, and use a low-dropout regulator (LDO) to minimize noise and ripple.
  • The RF4E110BNTR can handle up to 30 dBm (1W) of input power. However, it's recommended to operate at a maximum of 20 dBm (0.1W) to ensure reliable operation and minimize the risk of damage.
  • Use a pi-network or a T-network matching circuit to optimize the RF4E110BNTR for a specific frequency band. The component values will depend on the frequency band and the desired impedance match.
  • The RF4E110BNTR operates from -40°C to 85°C. However, the device's performance may degrade at extreme temperatures, and the recommended operating temperature range is -20°C to 70°C.

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RF4E110BNTR Overview

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