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RF4E110GNTR - ROHM Semiconductor

Description: 4.5V Drive Nch MOSFET

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Symbol
RF4E110GNTR - ROHM Semiconductor - PCB symbol
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PCB Footprints
RF4E110GNTR - ROHM Semiconductor PCB footprint - Other - Other - HUML2020L8 (Single)
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3D Models
RF4E110GNTR - ROHM Semiconductor - 3D model - Other - HUML2020L8 (Single)
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RF4E110GNTR Details

  • Manufacturer Part Number:

    RF4E110GNTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HUML2020L8, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0153 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RF4E110GNTR Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces short and away from noisy digital signals. Use a 50-ohm microstrip line for the RF output.
  • The RF4E110GNTR requires a 3.3V power supply and a bias voltage of 1.8V to 3.3V. Ensure the bias voltage is stable and noise-free. Use a voltage regulator and decoupling capacitors to minimize noise and ripple.
  • The RF4E110GNTR can handle up to 30 dBm (1W) of input power. Exceeding this limit may cause damage to the device. Ensure the input power is within the specified range to prevent damage.
  • Use a matching network to optimize the RF4E110GNTR for a specific frequency band. The matching network should be designed to provide a 50-ohm impedance match between the RF4E110GNTR and the antenna or load.
  • The RF4E110GNTR operates over a temperature range of -40°C to 85°C. Ensure the device is operated within this range to prevent damage or malfunction.

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RF4E110GNTR Overview

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