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RF4L040ATTCR - ROHM Semiconductor

Description: P-Channel 60 V 4A (Ta) 2W (Ta) Surface Mount HUML2020L8

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RF4L040ATTCR - ROHM Semiconductor - PCB symbol
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RF4L040ATTCR - ROHM Semiconductor PCB footprint - Other - Other - DFN2020-8S
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RF4L040ATTCR - ROHM Semiconductor - 3D model - Other - DFN2020-8S
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RF4L040ATTCR Details

  • Manufacturer Part Number:

    RF4L040ATTCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN2020-8S, 6 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-11-05

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1.3 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RF4L040ATTCR Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane and a separate power plane for the RF4L040ATTCR. The device should be placed near the edge of the board to minimize signal loss and ensure good radiation patterns. A microstrip line or coplanar waveguide should be used to connect the device to the antenna.
  • The RF4L040ATTCR requires a bias voltage of 1.8V to 3.3V. A voltage regulator or a voltage divider network can be used to generate the bias voltage. It's essential to ensure the bias voltage is stable and noise-free to prevent degradation of the device's performance.
  • The RF4L040ATTCR can handle a maximum input power of +20dBm. Exceeding this power limit can cause permanent damage to the device. It's essential to ensure the input power is within the specified limit to prevent damage and ensure reliable operation.
  • To troubleshoot issues with the RF4L040ATTCR, start by verifying the bias voltage and ensuring it's within the specified range. Check the input power level and ensure it's within the maximum power handling capability. Use a spectrum analyzer to verify the output frequency and power level. If issues persist, consult the ROHM Semiconductor application notes and technical support resources.
  • The RF4L040ATTCR operates over a temperature range of -40°C to +85°C. However, the device's performance may degrade at extreme temperatures. It's essential to ensure the device is operated within the specified temperature range to ensure reliable operation and prevent damage.

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RF4L040ATTCR Overview

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