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RFN10NS3STL - ROHM Semiconductor

Description: Fast Recovery Diode

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RFN10NS3STL - ROHM Semiconductor - PCB symbol
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PCB Footprints
RFN10NS3STL - ROHM Semiconductor PCB footprint - Other - Other - LPDS_Master
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3D Models
RFN10NS3STL - ROHM Semiconductor - 3D model - Other - LPDS_Master
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RFN10NS3STL Details

  • Manufacturer Part Number:

    RFN10NS3STL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263S, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.55

  • Application:

    SUPER FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.5 V

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    350 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.03 µs

  • Reverse Test Voltage:

    350 V

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RFN10NS3STL Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device should be placed near the edge of the board to minimize radiation and ensure optimal performance.
  • The device requires a stable voltage supply of 3.3V ± 10% and a bias current of 10mA to 30mA. A voltage regulator and a bias resistor can be used to ensure proper biasing.
  • The device can handle up to 10W of continuous power and 20W of peak power. However, it's recommended to derate the power handling capability based on the operating frequency and environmental conditions.
  • The device has an output impedance of 50Ω. A π-network or a T-network can be used to match the impedance to the system. The matching network should be designed to optimize the return loss and insertion loss.
  • The device can operate over a temperature range of -40°C to 125°C. However, the performance may degrade at extreme temperatures, and the device should be derated accordingly.

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RFN10NS3STL Overview

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