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RFN3BM2STL - ROHM Semiconductor

Description: Super Fast Recovery Diode VRM 200V, VR 200V,Storage Temperature[°C]: -55 to 150.

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PCB Footprints
RFN3BM2STL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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3D Models
RFN3BM2STL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RFN3BM2STL Details

  • Manufacturer Part Number:

    RFN3BM2STL

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-63, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    0

  • Application:

    SUPER FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.98 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    40 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.025 µs

  • Reverse Test Voltage:

    200 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFN3BM2STL Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the signal traces as short as possible. Additionally, it's essential to follow the recommended land pattern and keep the component placement symmetrical to minimize parasitic inductance.
  • The RFN3BM2STL requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and noise-free, and that the bias current is limited to 1mA or less. Also, make sure to follow the recommended bias circuit configuration and component values.
  • The RFN3BM2STL is designed to operate up to 2.7 GHz, but it can be used up to 3.0 GHz with some degradation in performance. However, it's essential to consult the datasheet and application notes for specific frequency-related characteristics and limitations.
  • The RFN3BM2STL has a maximum junction temperature of 150°C. Ensure good thermal conductivity by using a thermal pad or heat sink, and keep the component away from heat sources. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
  • The RFN3BM2STL has an ESD rating of 2 kV (Human Body Model). To ensure ESD protection, use ESD-sensitive handling procedures, and consider adding external ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design.

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RFN3BM2STL Overview

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