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RFN5TF8SC9 - ROHM Semiconductor

Description: Fast Recovery Diode

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Symbol
RFN5TF8SC9 - ROHM Semiconductor - PCB symbol
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PCB Footprints
RFN5TF8SC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220NFM_2022-1
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3D Models
RFN5TF8SC9 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO220NFM_2022-1
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RFN5TF8SC9 Details

  • Manufacturer Part Number:

    RFN5TF8SC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2017-12-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.1 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    800 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.04 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFN5TF8SC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the input and output traces as short as possible. Additionally, it's essential to follow the recommended land pattern and keep the component placement symmetrical to minimize parasitic inductance.
  • The RFN5TF8SC9 requires a bias voltage of 2.85V to 3.15V. Ensure the bias voltage is stable and within the recommended range. Also, use a low-ESR capacitor (e.g., 10uF) to decouple the bias pin from the power supply.
  • The RFN5TF8SC9 can handle up to 38.5dBm (7W) of input power. However, it's essential to ensure the device is properly heat-sinked and the ambient temperature is within the recommended range to prevent thermal shutdown.
  • Start by verifying the PCB layout and component placement. Check for any signs of damage, such as overheating or physical stress. Ensure the bias voltage is within the recommended range and the input and output impedances are properly matched. Use a spectrum analyzer to measure the output signal and identify any spurious signals or noise.
  • Yes, the RFN5TF8SC9 can be used in a push-pull configuration to achieve higher output power and improved linearity. However, it's essential to ensure the devices are properly matched and the input and output impedances are correctly terminated.

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RFN5TF8SC9 Overview

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