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RFN5TF8SFHC9 - ROHM Semiconductor

Description: Fast Recovery Diode (AEC-Q101 Qualified) Diode Standard 800 V 5A Through Hole TO-220NFM

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RFN5TF8SFHC9 - ROHM Semiconductor - PCB symbol
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PCB Footprints
RFN5TF8SFHC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220NFM
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3D Models
RFN5TF8SFHC9 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-220NFM
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RFN5TF8SFHC9 Details

  • Manufacturer Part Number:

    RFN5TF8SFHC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.1 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    800 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.04 µs

  • Reverse Test Voltage:

    800 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFN5TF8SFHC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the input and output traces as short as possible. Additionally, it's essential to follow the recommended land pattern and keep the component placement symmetrical to minimize parasitic inductance.
  • The RFN5TF8SFHC9 requires a bias voltage of 2.85V to 3.15V. Ensure that the bias voltage is stable and within the recommended range. Also, make sure to follow the recommended bias circuit configuration and component values to minimize noise and ensure optimal performance.
  • The RFN5TF8SFHC9 is rated for operation from -40°C to +125°C. However, it's essential to ensure that the device is properly derated for temperature to prevent thermal runaway and ensure reliable operation.
  • The RFN5TF8SFHC9 has an integrated ESD protection circuit, but it's still essential to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that all equipment is properly grounded to prevent static discharge.
  • Store the RFN5TF8SFHC9 in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%. Avoid storing the device in direct sunlight or near sources of moisture.

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RFN5TF8SFHC9 Overview

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