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RFP70N06 - onsemi

Description: 175°C Operating Temperature; 70A, 60V; Peak Current vs Pulse Width Curve; UIS Rating Curve (Single Pulse); Temperature Compensating PSPICE® Model; rDS(ON)= 0.014Ω; Related Literature  TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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PCB Footprints
RFP70N06 - onsemi PCB footprint - Other - Other - TO254P483X1016X2222-3P
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RFP70N06 Details

  • Manufacturer Part Number:

    RFP70N06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    206 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    73 ns

  • Turn-on Time-Max (ton):

    190 ns

RFP70N06 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the RFP70N06 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
  • The recommended gate drive voltage for the RFP70N06 is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage, but this may reduce the device's lifespan.
  • Yes, the RFP70N06 is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance may degrade at frequencies above 50 kHz, and additional considerations such as gate drive strength and PCB layout become crucial.
  • To protect the RFP70N06 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) diode. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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RFP70N06 Overview

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Part Image SMP60N06-14 National Semiconductor Corporation

Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB